UM
Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon
Ko W.S.; Bhattacharya I.; Tran T.-T.D.; Ng K.W.; Adair Gerke S.; Chang-Hasnain C.
2016-09-23
Source PublicationScientific Reports
ISSN20452322
Volume6
AbstractHighly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage.
DOI10.1038/srep33368
URLView the original
Language英語
Fulltext Access
Citation statistics
Cited Times [WOS]:14   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationUniversity of California, Berkeley
Recommended Citation
GB/T 7714
Ko W.S.,Bhattacharya I.,Tran T.-T.D.,et al. Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon[J]. Scientific Reports,2016,6.
APA Ko W.S.,Bhattacharya I.,Tran T.-T.D.,Ng K.W.,Adair Gerke S.,&Chang-Hasnain C..(2016).Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon.Scientific Reports,6.
MLA Ko W.S.,et al."Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon".Scientific Reports 6(2016).
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Ko W.S.]'s Articles
[Bhattacharya I.]'s Articles
[Tran T.-T.D.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Ko W.S.]'s Articles
[Bhattacharya I.]'s Articles
[Tran T.-T.D.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Ko W.S.]'s Articles
[Bhattacharya I.]'s Articles
[Tran T.-T.D.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.