UM
Electric fatigue in Pb(Nb,Zr,Sn,Ti)O3 thin films grown by a sol-gel process
Zhai J.; Chen H.
2003-08-04
Source PublicationApplied Physics Letters
ISSN00036951
Volume83Issue:5Pages:978-980
AbstractElectric fatigue in Pb(Nb,Zr,Sn,Ti)O thin films grown by sol-gel process was investigated. Films were grown on LaNiO -buffered Pt/Ti/SiO/Si substrates. It was found that with an increase in cycling field, the remanent polarization increased. Fatigue properties of the films were closely related to the nonuniform strain buildup due to switching.
DOI10.1063/1.1594843
URLView the original
Language英語
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Cited Times [WOS]:24   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationCity University of Hong Kong
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GB/T 7714
Zhai J.,Chen H.. Electric fatigue in Pb(Nb,Zr,Sn,Ti)O3 thin films grown by a sol-gel process[J]. Applied Physics Letters,2003,83(5):978-980.
APA Zhai J.,&Chen H..(2003).Electric fatigue in Pb(Nb,Zr,Sn,Ti)O3 thin films grown by a sol-gel process.Applied Physics Letters,83(5),978-980.
MLA Zhai J.,et al."Electric fatigue in Pb(Nb,Zr,Sn,Ti)O3 thin films grown by a sol-gel process".Applied Physics Letters 83.5(2003):978-980.
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