UM
Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates
Zhai J.; Chen H.
2003-01-20
Source PublicationApplied Physics Letters
ISSN00036951
Volume82Issue:3Pages:442-444
AbstractThe ferroelectric properties were investigated in BiLaTiO (BLT) thin films grown on the highly oriented LaNiO buffered Pt/Ti/SiO/Si substrates. The results showed that the BLT films are composed of peg-like or platelet-like grains depending upon annealing temperature and substrate type. Good polarization-voltage, capacitance-voltage, and current-voltage characteristics were demonstrated by BLT films.
DOI10.1063/1.1539928
URLView the original
Language英語
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Cited Times [WOS]:37   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationCity University of Hong Kong
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Zhai J.,Chen H.. Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates[J]. Applied Physics Letters,2003,82(3):442-444.
APA Zhai J.,&Chen H..(2003).Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates.Applied Physics Letters,82(3),442-444.
MLA Zhai J.,et al."Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates".Applied Physics Letters 82.3(2003):442-444.
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