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Electrical properties of Ta-doped SnO2 thin films prepared by the metal-organic chemical-vapor deposition method
Lee S.W.; Kim Y.-W.; Chen H.
2001-01-15
Source PublicationApplied Physics Letters
ISSN00036951
Volume78Issue:3Pages:350-352
AbstractUndoped and Ta-doped SnO (SnTaO) thin films were prepared on Corning 7059 glass substrates by the metal-organic chemical-vapor deposition method. The relative amount of Ta, C=X/(X+X), varied from 0 to 7.13 at. %. For the five compositions studied, the lowest resistivity at room temperature was 2.01×10 cm at C=3.75% with charge carrier density and mobility of 1.27×10 cm and 24.5 cm/Vs, respectively. In microstructural investigation, 3.75% Ta-doped film maintains a growth pattern of initial stage growth while 7.13% Ta-doped film has a high population of small grains at the interface, which results in large grains through competitive growth. The resistivity of the undoped film was 0.17 cm with charge carrier density and mobility of 1.31×10 cm and 28.1 cm/Vs obtained from Hall measurement. This study suggests that Ta is an excellent n-type dopant in SnO. © 2001 American Institute of Physics.
DOI10.1063/1.1337640
URLView the original
Language英語
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Cited Times [WOS]:62   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationUniversity of Illinois at Urbana-Champaign
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Lee S.W.,Kim Y.-W.,Chen H.. Electrical properties of Ta-doped SnO2 thin films prepared by the metal-organic chemical-vapor deposition method[J]. Applied Physics Letters,2001,78(3):350-352.
APA Lee S.W.,Kim Y.-W.,&Chen H..(2001).Electrical properties of Ta-doped SnO2 thin films prepared by the metal-organic chemical-vapor deposition method.Applied Physics Letters,78(3),350-352.
MLA Lee S.W.,et al."Electrical properties of Ta-doped SnO2 thin films prepared by the metal-organic chemical-vapor deposition method".Applied Physics Letters 78.3(2001):350-352.
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