UM
C 60 encapsulation of the Si(111)-(7×7) surface
Hong H.2; McMahon W.E.2; Zschack P.1; Lin D.-S.2; Aburano R.D.2; Chen H.2; Chiang T.-C.2
1992-12-01
Source PublicationApplied Physics Letters
ISSN00036951
Volume61Issue:26Pages:3127-3129
AbstractThe structure of a Si(111)-(7×7) surface capped by a 200 Å film of C was studied by grazing-incidence x-ray diffraction. The Si(111)-(7×7) reconstruction prepared in vacuum, including the loosely bonded "adatoms" on the surface, is preserved under the C overlayer. This result illustrates that C can be used as an inert cap for surfaces and suggests potentially interesting applications in surface science research and electronic device engineering.
DOI10.1063/1.107982
URLView the original
Language英語
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Cited Times [WOS]:34   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Oak Ridge National Laboratory
2.University of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Hong H.,McMahon W.E.,Zschack P.,et al. C 60 encapsulation of the Si(111)-(7×7) surface[J]. Applied Physics Letters,1992,61(26):3127-3129.
APA Hong H..,McMahon W.E..,Zschack P..,Lin D.-S..,Aburano R.D..,...&Chiang T.-C..(1992).C 60 encapsulation of the Si(111)-(7×7) surface.Applied Physics Letters,61(26),3127-3129.
MLA Hong H.,et al."C 60 encapsulation of the Si(111)-(7×7) surface".Applied Physics Letters 61.26(1992):3127-3129.
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