UM
Molecular beam epitaxial growth and characterization of InSb on Si
Chyi J.-I.1; Biswas D.1; Iyer S.V.1; Kumar N.S.1; Morkoc H.1; Bean R.2; Zanio K.2; Lee H.-Y.1; Chen H.1
1989-12-01
Source PublicationApplied Physics Letters
ISSN00036951
Volume54Issue:11Pages:1016-1018
AbstractEpitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm /V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×10 and 2.7×10 cm. A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm/V s with carrier concentrations of about 2.0×10 cm. A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer.
DOI10.1063/1.100784
URLView the original
Language英語
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Cited Times [WOS]:80   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.University of Illinois at Urbana-Champaign
2.Space Systems Loral
Recommended Citation
GB/T 7714
Chyi J.-I.,Biswas D.,Iyer S.V.,et al. Molecular beam epitaxial growth and characterization of InSb on Si[J]. Applied Physics Letters,1989,54(11):1016-1018.
APA Chyi J.-I..,Biswas D..,Iyer S.V..,Kumar N.S..,Morkoc H..,...&Chen H..(1989).Molecular beam epitaxial growth and characterization of InSb on Si.Applied Physics Letters,54(11),1016-1018.
MLA Chyi J.-I.,et al."Molecular beam epitaxial growth and characterization of InSb on Si".Applied Physics Letters 54.11(1989):1016-1018.
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