UM

Browse/Search Results:  1-9 of 9 Help

Selected(0)Clear Items/Page:    Sort:
GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates Journal article
Applied Physics Letters, 1997,Volume: 71,Issue: 1,Page: 78-80
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Li J.;  Horton T.;  Curtis A.P.;  Hsieh K.C.;  Chuang S.L.;  Chen H.;  Feng M.;  Stillman G.E.;  Li L.;  Liu H.C.;  Bandara K.M.S.V.;  Gunapala S.D.;  Wang W.I.
Favorite  |  View/Download:2/0  |  Submit date:2019/04/08
Growth and characterization of InAs x P 1-x /InP strained multiple quantum wells by gas source molecular beam epitaxy Conference paper
Materials Research Society Symposium - Proceedings
Authors:  Kuo H.C.;  Thomas S.;  Curtis A.P.;  Stillman G.E.;  Lin C.H.;  Chen H.
Favorite  |  View/Download:4/0  |  Submit date:2019/04/08
Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD Conference paper
Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
Authors:  Yang Q.;  Hartmann Q.J.;  Curtis A.P.;  Lin C.;  Ahmari D.A.;  Scott D.;  Kuo H.C.;  Chen H.;  Stillman G.E.
Favorite  |  View/Download:6/0  |  Submit date:2019/04/08
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 12,Page: 1376-1381
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.;  Horton T.U.;  Hartman Q.;  Kuo H.C.;  Thomas S.;  Miller J.;  Hsieh K.C.;  Adesida I.;  Chuang S.L.;  Feng M.;  Stillman G.E.;  Chang Y.C.;  Wu W.;  Tucker J.;  Chen H.;  Gibson J.M.;  Mazumder J.;  Li L.;  Liu H.C.
Favorite  |  View/Download:7/0  |  Submit date:2019/04/08
Gas source molecular beam epitaxy (GSMBE)  InP/inGaAs  Quantum-well infrared photodectors (QWIPs)  
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 12,Page: 1376-1381
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.;  Horton T.U.;  Hartman Q.;  Kuo H.C.;  Thomas S.;  Miller J.;  Hsieh K.C.;  Adesida I.;  Chuang S.L.;  Feng M.;  Stillman G.E.;  Chang Y.C.;  Wu W.;  Tucker J.;  Chen H.;  Gibson J.M.;  Mazumder J.;  Li L.;  Liu H.C.
Favorite  |  View/Download:3/0  |  Submit date:2019/04/08
Gas source molecular beam epitaxy (GSMBE)  InP/inGaAs  Quantum-well infrared photodectors (QWIPs)  
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 12,Page: 1382-1388
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.;  Horton T.U.;  Kuo H.C.;  Moy A.;  Miller J.;  Hsieh K.C.;  Cheng K.Y.;  Chen H.;  Adesida I.;  Chuang S.L.;  Feng M.;  Stillman G.E.;  Wu W.;  Tucker J.;  Chang Y.C.;  Li L.;  Liu H.C.
Favorite  |  View/Download:3/0  |  Submit date:2019/04/08
Gas source molecular beam epitaxy (MBE)  InGaAs/InP  Quantum well infrared photodetectors QWIPs  
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 12,Page: 1382-1388
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.;  Horton T.U.;  Kuo H.C.;  Moy A.;  Miller J.;  Hsieh K.C.;  Cheng K.Y.;  Chen H.;  Adesida I.;  Chuang S.L.;  Feng M.;  Stillman G.E.;  Wu W.;  Tucker J.;  Chang Y.C.;  Li L.;  Liu H.C.
Favorite  |  View/Download:3/0  |  Submit date:2019/04/08
Gas source molecular beam epitaxy (MBE)  InGaAs/InP  Quantum well infrared photodetectors QWIPs  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 1,Page: 43-51
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.;  Kuo H.C.;  Turnbull D.;  Lin C.H.;  Li J.;  Hsieh K.C.;  Chuang S.L.;  Adesida I.;  Feng M.;  Bishop S.G.;  Stillman G.E.;  Gibson J.M.;  Chen H.;  Mazumder J.;  Liu H.C.
Favorite  |  View/Download:4/0  |  Submit date:2019/04/08
Dark current characteristics  Multiple quantum well infrared photodectors (QWIPs)  Quantum efficiency  Rapid thermal annealing (RTA)  Red shift  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 1,Page: 43-51
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.;  Kuo H.C.;  Turnbull D.;  Lin C.H.;  Li J.;  Hsieh K.C.;  Chuang S.L.;  Adesida I.;  Feng M.;  Bishop S.G.;  Stillman G.E.;  Gibson J.M.;  Chen H.;  Mazumder J.;  Liu H.C.
Favorite  |  View/Download:2/0  |  Submit date:2019/04/08
Dark current characteristics  Multiple quantum well infrared photodectors (QWIPs)  Quantum efficiency  Rapid thermal annealing (RTA)  Red shift