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GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates Journal article
Applied Physics Letters, 1997,Volume: 71,Issue: 1,Page: 78-80
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Li J.;  Horton T.;  Curtis A.P.;  Hsieh K.C.;  Chuang S.L.;  Chen H.;  Feng M.;  Stillman G.E.;  Li L.;  Liu H.C.;  Bandara K.M.S.V.;  Gunapala S.D.;  Wang W.I.
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Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing Journal article
Applied Physics Letters, 1997,Volume: 70,Issue: 26,Page: 3573-3575
Authors:  Sengupta D.K.;  Horton T.;  Fang W.;  Curtis A.;  Li J.;  Chuang S.L.;  Chen H.;  Feng M.;  Stillman G.E.;  Kar A.;  Mazumder J.;  Li L.;  Liu H.C.
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Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 1,Page: 43-51
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.;  Kuo H.C.;  Turnbull D.;  Lin C.H.;  Li J.;  Hsieh K.C.;  Chuang S.L.;  Adesida I.;  Feng M.;  Bishop S.G.;  Stillman G.E.;  Gibson J.M.;  Chen H.;  Mazumder J.;  Liu H.C.
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Dark current characteristics  Multiple quantum well infrared photodectors (QWIPs)  Quantum efficiency  Rapid thermal annealing (RTA)  Red shift  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 1,Page: 43-51
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.;  Kuo H.C.;  Turnbull D.;  Lin C.H.;  Li J.;  Hsieh K.C.;  Chuang S.L.;  Adesida I.;  Feng M.;  Bishop S.G.;  Stillman G.E.;  Gibson J.M.;  Chen H.;  Mazumder J.;  Liu H.C.
Favorite  |  View/Download:2/0  |  Submit date:2019/04/08
Dark current characteristics  Multiple quantum well infrared photodectors (QWIPs)  Quantum efficiency  Rapid thermal annealing (RTA)  Red shift