UM

Browse/Search Results:  1-6 of 6 Help

Selected(0)Clear Items/Page:    Sort:
Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe Journal article
Journal of Crystal Growth, 1993,Volume: 127,Issue: 1-4,Page: 204-208
Authors:  Strite S.;  Chandrasekhar D.;  Smith D.J.;  Sariel J.;  Chen H.;  Teraguchi N.;  Morkoc H.
Favorite  |  View/Download:2/0  |  Submit date:2019/04/08
Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe Journal article
Journal of Crystal Growth, 1993,Volume: 127,Issue: 1-4,Page: 204-208
Authors:  Strite S.;  Chandrasekhar D.;  Smith D.J.;  Sariel J.;  Chen H.;  Teraguchi N.;  Morkoc H.
Favorite  |  View/Download:2/0  |  Submit date:2019/04/08
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991,Volume: 9,Issue: 4,Page: 1924-1929
Authors:  Strite S.;  Ruan J.;  Li Z.;  Salvador A.;  Chen H.;  Smith D.J.;  Choyke W.J.;  Morkoc H.
Favorite  |  View/Download:4/0  |  Submit date:2019/04/08
Cathodoluminescence  Crystal structure  Energy gap  Films  Gallium arsenides  Gallium nitrides  Layers  Medium temperature  Molecular beam epitaxy  Optical properties  Transmission electron microscopy  X-Ray diffraction  
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991,Volume: 9,Issue: 4,Page: 1924-1929
Authors:  Strite S.;  Ruan J.;  Li Z.;  Salvador A.;  Chen H.;  Smith D.J.;  Choyke W.J.;  Morkoc H.
Favorite  |  View/Download:2/0  |  Submit date:2019/04/08
Cathodoluminescence  Crystal structure  Energy gap  Films  Gallium arsenides  Gallium nitrides  Layers  Medium temperature  Molecular beam epitaxy  Optical properties  Transmission electron microscopy  X-Ray diffraction  
Molecular beam epitaxial growth and characterization of InSb on Si Journal article
Applied Physics Letters, 1989,Volume: 54,Issue: 11,Page: 1016-1018
Authors:  Chyi J.-I.;  Biswas D.;  Iyer S.V.;  Kumar N.S.;  Morkoc H.;  Bean R.;  Zanio K.;  Lee H.-Y.;  Chen H.
Favorite  |  View/Download:3/0  |  Submit date:2019/04/08
Molecular beam epitaxial growth and characterization of InSb on Si Journal article
Applied Physics Letters, 1989,Volume: 54,Issue: 11,Page: 1016-1018
Authors:  Chyi J.-I.;  Biswas D.;  Iyer S.V.;  Kumar N.S.;  Morkoc H.;  Bean R.;  Zanio K.;  Lee H.-Y.;  Chen H.
Favorite  |  View/Download:2/0  |  Submit date:2019/04/08