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Enhancement of room-temperature magnetization in GaFeO3-type single crystals by Al and Sc doping
Wang, Ling1,2; Katayama, Tsukasa3,4; Wang, Chaoyue1; Li, Qin1; Shi, Yun1; Fang, Yuqiang1; Huang, Fuqiang1; Zhu, Yinghao5; Li, Hai Feng5; Yasui, Shintaro6; Huang, Xintang2; Yu, Jianding1
2022-06-01
Source PublicationAIP Advances
Volume12Issue:6
Abstract

GaFeO3-type oxides are promising multiferroic materials due to the coexistence of spontaneous magnetization and ferroelectric polarization properties at room temperature. As these ferroic properties feature a large anisotropy, single crystals are required. However, the magnetization of GaFeO3-type single crystals remains low at room temperature. In this study, we largely enhanced the magnetization at room temperature of GaFeO3-type single crystals by increasing the Fe content and co-doping Sc3+ and Al3+. Single crystals of AlxSc0.1-xGa0.6Fe1.3O3 (x = 0.01-0.04) were prepared using the optical floating-zone method. The single crystals were rod-shaped, with a diameter and length of ∼6 mm and 7 cm, respectively. X-ray diffraction measurements confirmed the ferroelectric polarization of the crystals. In addition, they exhibited room-temperature ferrimagnetism, with Curie temperature in the range of 326-338 K; the crystals exhibit magnetic anisotropy along the a-axis. The magnetization of the single crystal at 300 K and 0.3 kOe was 13 emu g-1, which is over ten times larger than those of previously reported single crystals with GaFeO3-type crystal structure.

DOI10.1063/5.0088234
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000812842500003
Scopus ID2-s2.0-85132114849
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Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorKatayama, Tsukasa; Huang, Xintang; Yu, Jianding
Affiliation1.State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China
2.College of Physical Science and Technology, Central China Normal University, Wuhan, 430079, China
3.Research Institute for Electronic Science, Hokkaido University, Sapporo, N20W10, Kita, 001-0020, Japan
4.JST-PRESTO, Saitama, Kawaguchi, 332-0012, Japan
5.Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, 999078, Macao
6.Laboratory for Advanced Nuclear Energy, Tokyo Institute of Technology, Tokyo, 152-8550, Japan
Recommended Citation
GB/T 7714
Wang, Ling,Katayama, Tsukasa,Wang, Chaoyue,et al. Enhancement of room-temperature magnetization in GaFeO3-type single crystals by Al and Sc doping[J]. AIP Advances,2022,12(6).
APA Wang, Ling,Katayama, Tsukasa,Wang, Chaoyue,Li, Qin,Shi, Yun,Fang, Yuqiang,Huang, Fuqiang,Zhu, Yinghao,Li, Hai Feng,Yasui, Shintaro,Huang, Xintang,&Yu, Jianding.(2022).Enhancement of room-temperature magnetization in GaFeO3-type single crystals by Al and Sc doping.AIP Advances,12(6).
MLA Wang, Ling,et al."Enhancement of room-temperature magnetization in GaFeO3-type single crystals by Al and Sc doping".AIP Advances 12.6(2022).
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