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An inverse-class-F CMOS oscillator with intrinsic-high-Q first harmonic and second harmonic resonances
Lim C.C.3; Ramiah H.3; Yin J.1; Mak P.-I.1; Martins R.P.1
2018-12-01
Source PublicationIEEE Journal of Solid-State Circuits
ISSN00189200
Volume53Issue:12Pages:3528-3539
Abstract

This paper details the theory and implementation of an inverse-class-F (class-F) CMOS oscillator. It features: 1) a single-ended PMOS-NMOS-complementary architecture to generate the differential outputs and 2) a transformer-based two-port resonator to boost the drain-to-gate voltage gain (A) while creating two intrinsic-high-Q impedance peaks at the fundamental (f) and double (2f) oscillation frequencies. The enlarged second harmonic voltage extends the flat span in which the impulse sensitivity function (ISF) is minimum, and the amplified gate voltage swing reduces the current commutation time, thereby lowering the - g transistor's noise-to-phase noise (PN) conversion. Prototyped in 65-nm CMOS, the class- F oscillator at 4 GHz exhibits a PN of -144.8 dBc/Hz at a 10-MHz offset, while offering a tuning range of 3.5-4.5 GHz. The corresponding figure of merit (FoM) is 196.1 dBc/Hz, and the die area is 0.14 mm.

KeywordFigure Of Merit (Fom) Flicker Noise Upconversion Inverse-class-f (Class-f-1) Oscillator Phase Noise (Pn) Second Harmonic Resonance Voltage-biased Oscillator
DOI10.1109/JSSC.2018.2875099
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000454108600018
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Cited Times [WOS]:22   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF MICROELECTRONICS
Corresponding AuthorYin J.
Affiliation1.Universidade de Macau
2.Instituto Superior Técnico
3.University of Malaya
Corresponding Author AffilicationUniversity of Macau
Recommended Citation
GB/T 7714
Lim C.C.,Ramiah H.,Yin J.,et al. An inverse-class-F CMOS oscillator with intrinsic-high-Q first harmonic and second harmonic resonances[J]. IEEE Journal of Solid-State Circuits,2018,53(12):3528-3539.
APA Lim C.C.,Ramiah H.,Yin J.,Mak P.-I.,&Martins R.P..(2018).An inverse-class-F CMOS oscillator with intrinsic-high-Q first harmonic and second harmonic resonances.IEEE Journal of Solid-State Circuits,53(12),3528-3539.
MLA Lim C.C.,et al."An inverse-class-F CMOS oscillator with intrinsic-high-Q first harmonic and second harmonic resonances".IEEE Journal of Solid-State Circuits 53.12(2018):3528-3539.
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