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Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs
Gao, Shuai1,2; Yang, Jin Hu1,2; Ye, Bing1,2; Cai, Chang3; He, Ze1,2; Liu, Jie1,2; Liu, Tian Qi4; Yan, Xiao Yu1,2; Sun, You Mei1,2; Xiao, Guo Qing1,2
2022-09-01
Source PublicationNuclear Science and Techniques
ISSN1001-8042
Volume33Issue:9
Abstract

Multiple-bit upsets (MBUs) have become a threat to modern advanced field-programmable gate arrays (FPGAs) applications in radiation environments. Hence, many investigations have been conducted using medium-energy heavy ions to study the effects of MBU radiation. However, high-energy heavy ions (HEHIs) greatly affect the size and percentage of MBUs because their ionization-track structures differ from those of medium-energy heavy ions. In this study, the different impacts of high-energy and medium-energy heavy ions on MBUs in 28 nm FPGAs as well as their mechanisms are thoroughly investigated. With the Geant4 calculation, more serious energy effects of HEHIs on MBU scales were successfully demonstrated. In addition, we identified worse MBU responses resulting from lowered voltages. The MBU orientation effect was observed in the radiation of different dimensions. The broadened ionization tracks for tilted tests in different dimensions could result in different MBU sizes. The results also revealed that the ionization tracks of tilted HEHIs have more severe impacts on the MBU scales than medium-energy heavy ions with much higher linear energy transfer. Therefore, comprehensive radiation with HEHIs is indispensable for effective hardened designs to apply high-density 28 nm FPGAs in deep space exploration.

KeywordFpga High-energy Heavy-ion Radiation Ionization Track Mbu
DOI10.1007/s41365-022-01099-7
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaNuclear Science & Technology ; Physics
WOS SubjectNuclear Science & Technology ; Physics, Nuclear
WOS IDWOS:000853495100003
Scopus ID2-s2.0-85138685257
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Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, China
2.University of Chinese Academy of Sciences, Beijing, 100049, China
3.State Key Laboratory of ASIC and System, Fudan University, Shanghai, 201203, China
4.State Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, 999078, Macao
Recommended Citation
GB/T 7714
Gao, Shuai,Yang, Jin Hu,Ye, Bing,et al. Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs[J]. Nuclear Science and Techniques,2022,33(9).
APA Gao, Shuai,Yang, Jin Hu,Ye, Bing,Cai, Chang,He, Ze,Liu, Jie,Liu, Tian Qi,Yan, Xiao Yu,Sun, You Mei,&Xiao, Guo Qing.(2022).Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs.Nuclear Science and Techniques,33(9).
MLA Gao, Shuai,et al."Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs".Nuclear Science and Techniques 33.9(2022).
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