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Phase-driven magneto-electrical characteristics of single-layer MoS 2
Chao-Yao Yang1; Kuan-Chang Chiu2; Shu-Jui Chang1; Xin-Quan Zhang.2; Jaw-Yeu Liang1; Chi-Sheng Chung1; Hui Pan3; Jenn-Ming Wu2; Yuan-Chieh Tseng3; Yi-Hsien Lee2
2016-03-14
Source PublicationNanoscale
ISSN2040-3364
Volume8Issue:10Pages:5627-5633
Other Abstract

Magnetism of the MoS2 semiconducting atomic layer was highlighted for its great potential in the applications of spintronics and valleytronics. In this study, we demonstrate an evolution of magneto-electrical properties of single layer MoS2 with the modulation of defect configurations and formation of a partial 1T phase. With Ar treatment, sulfur was depleted within the MoS2 flake leading to a 2H (low-spin) → partial 1T (high-spin) phase transition. The phase transition was accompanied by the development of a ferromagnetic phase. Alternatively, the phase transition could be driven by the desorption of S atoms at the edge of MoS2via O2 treatment while with a different ordering magnitude in magnetism. The edge-sensitive magnetism of the single-layer MoS2 was monitored by magnetic force microscopy and validated by a first-principle calculation with graded-Vs (sulfur vacancy) terminals set at the edge, where band-splitting appeared more prominent with increasing Vs. Treatment with Ar and O2 enabled a dual electrical characteristic of the field effect transistor (FET) that featured linear and saturated responses of different magnitudes in the IdsVds curves, whereas the pristine MoS2 FET displayed only a linear electrical dependency. The correlation and tuning of the Vs–1T phase transition would provide a playground for tailoring the phase-driven properties of MoS2 semiconducting atomic layers in spintronic applications.

DOI10.1039/c5nr08850j
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaChemistry ; Physics ; Materials Science ; Science & Technology - Other Topics
WOS SubjectChemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000371665400028
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Cited Times [WOS]:16   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorYuan-Chieh Tseng
Affiliation1.Materials Science & Engineering, National Chiao-Tung University, Hsin-Chu, Taiwan.
2.Materials Science & Engineering, National Tsing Hua University, Hsin-Chu, Taiwan
3.Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Chao-Yao Yang,Kuan-Chang Chiu,Shu-Jui Chang,et al. Phase-driven magneto-electrical characteristics of single-layer MoS 2[J]. Nanoscale,2016,8(10):5627-5633.
APA Chao-Yao Yang,Kuan-Chang Chiu,Shu-Jui Chang,Xin-Quan Zhang.,Jaw-Yeu Liang,Chi-Sheng Chung,Hui Pan,Jenn-Ming Wu,Yuan-Chieh Tseng,&Yi-Hsien Lee.(2016).Phase-driven magneto-electrical characteristics of single-layer MoS 2.Nanoscale,8(10),5627-5633.
MLA Chao-Yao Yang,et al."Phase-driven magneto-electrical characteristics of single-layer MoS 2".Nanoscale 8.10(2016):5627-5633.
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