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Electronic properties of tin dichalcogenide monolayers and effects of hydrogenation and tension
Wen S.1; Pan H.1; Zheng Y.2
2015-04-21
Source PublicationJournal of Materials Chemistry C
ISSN20507526 20507534
Volume3Issue:15Pages:3714-3721
Abstract

Transition metal dichalcogenide monolayers have attracted extensive attention because of their rich physical and chemical properties and wide applications. In this work, we systematically investigate the electronic properties of tin dichalcogenide monolayers (SnX, X = S, Se, and Te) and the effects of hydrogenation and tension by first-principles calculations based on the density-functional theory. We find that a pure SnX monolayer can be an intrinsic semiconductor or metal depending on the Sn-X bonding state. Hydrogenation can transfer its conductivity from a narrow-band semiconductor or a metal to wide-band semiconductor. We further show that a monolayer with a tunable band gap and even metallic characteristics can be achieved by applying tension. We predict that these tin-based dichalcogenide monolayers with controllable multi-functions may be employed in nanodevices and sensors. This journal is

DOI10.1039/c5tc00093a
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000352288300028
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Cited Times [WOS]:24   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Affiliation1.Universidade de Macau
2.University of Texas at Austin
First Author AffilicationUniversity of Macau
Recommended Citation
GB/T 7714
Wen S.,Pan H.,Zheng Y.. Electronic properties of tin dichalcogenide monolayers and effects of hydrogenation and tension[J]. Journal of Materials Chemistry C,2015,3(15):3714-3721.
APA Wen S.,Pan H.,&Zheng Y..(2015).Electronic properties of tin dichalcogenide monolayers and effects of hydrogenation and tension.Journal of Materials Chemistry C,3(15),3714-3721.
MLA Wen S.,et al."Electronic properties of tin dichalcogenide monolayers and effects of hydrogenation and tension".Journal of Materials Chemistry C 3.15(2015):3714-3721.
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