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Resonant Raman scattering study of BexZn1-xO thin films grown on sapphire by molecular beam epitaxy
Yu-Chao Wang1; Long-Xing Su2; Yu Zhao1; Jian-Feng Liu1; Zheng-Chuan Shen1; Yu-Hua Feng1; Tian-Zhun Wu3; Zi-Kang Tang4
2017-05-22
Source PublicationINTERNATIONAL JOURNAL OF MODERN PHYSICS B
ISSN0217-9792
Volume31Issue:16-19
Abstract

Resonance Raman spectra of BexxZn1−x1−xO alloy materials were studied using 325 nm Laser. The research showed that the Raman spectra of BexxZn1−x1−xO alloys presents a dual-mode vibration. Compare BexxZn1−x1−xO alloy with ZnO single crystal, the A1 (LO) phonon vibration mode of BexxZn1−x1−xO alloy moved to the larger wave number direction. The position of A1 (LO) phonon vibration modes of Be0.080.08Zn0.920.92O and Be0.120.12Zn0.880.88O was 580 cm−1−1 and 582 cm−1−1, respectively. In addition, the temperature-dependent Raman spectroscopy was employed for Be0.120.12Zn0.880.88O, and the phonon mode frequency shift with temperature was studied in detail. Finally, the stability of the polar and nonpolar BexxZn1−x1−xO alloy materials was studied using resonance Raman spectroscopy. The results showed that the A1 (LO) phonon mode frequency of polar BexxZn1−x1−xO alloy remained in the same position, while the nonpolar BexxZn1−x1−xO alloys moved nearly 3.5 cm−1−1 to larger direction after being placed in the air for two years. The reason may be that the stability of the nonpolar BexxZn1−x1−xO alloy is relatively poor upon interaction with molecule such as H2O, O2 in the air.

KeywordResonant Raman Bexzn1-xo Alloy Phonon Vibration Molecular Beam Epitaxy
DOI10.1142/S0217979217440672
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaPhysics
WOS SubjectPhysics, Applied ; Physics, Condensed Matter ; Physics, Mathematical
WOS IDWOS:000406349900067
PublisherWORLD SCIENTIFIC PUBL CO PTE LTD
The Source to ArticleWOS
Scopus ID2-s2.0-85026199198
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Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorYu-Chao Wang; Zi-Kang Tang
Affiliation1.Xichang Satellite Launch Center, Xichang, 615000, P. R. China
2.San’an Optoelectronics Co. Ltd., Xiamen, 361009, P. R. China
3.Shenzhen Institutes of Advanced Technology, Chinese Academy of Science, Shenzhen 518055, P. R. China
4.Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau, P. R. China
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Yu-Chao Wang,Long-Xing Su,Yu Zhao,et al. Resonant Raman scattering study of BexZn1-xO thin films grown on sapphire by molecular beam epitaxy[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2017,31(16-19).
APA Yu-Chao Wang,Long-Xing Su,Yu Zhao,Jian-Feng Liu,Zheng-Chuan Shen,Yu-Hua Feng,Tian-Zhun Wu,&Zi-Kang Tang.(2017).Resonant Raman scattering study of BexZn1-xO thin films grown on sapphire by molecular beam epitaxy.INTERNATIONAL JOURNAL OF MODERN PHYSICS B,31(16-19).
MLA Yu-Chao Wang,et al."Resonant Raman scattering study of BexZn1-xO thin films grown on sapphire by molecular beam epitaxy".INTERNATIONAL JOURNAL OF MODERN PHYSICS B 31.16-19(2017).
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