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Degenerated MgZnO films obtained by excessive zinc
Liu J.S.2; Shan C.X.2; Wang S.P.2; Li B.H.2; Zhang Z.Z.2; Shen D.Z.2
2012-05-15
Source PublicationJournal of Crystal Growth
ISSN0022-0248
Volume347Issue:1Pages:95-98
Abstract

By introducing excessive zinc during the growth process, degenerated Mg Zn O films have been prepared. The resistivity of the Mg Zn O films is only 0.053 cm, and the electron concentration is 1.0×10 cm , which is well above the Mott concentration of ZnO (2.9×10 cm ). The origin of such a high electron concentration can be attributed to the excessive zinc in the films. The results reported in this paper provide a route to conductive degenerated MgZnO films, thus may lay a ground for the fabrication of ZnO-based heterostructures or deep ultraviolet optoelectronic devices. 

KeywordA1. Characterization A3. Molecular Beam Epitaxy B2. Semiconducting Ii-vi Materials
DOI10.1016/j.jcrysgro.2012.03.028
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000303729100018
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Cited Times [WOS]:11   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorShan C.X.
Affiliation1.University of Chinese Academy of Sciences
2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Liu J.S.,Shan C.X.,Wang S.P.,et al. Degenerated MgZnO films obtained by excessive zinc[J]. Journal of Crystal Growth,2012,347(1):95-98.
APA Liu J.S.,Shan C.X.,Wang S.P.,Li B.H.,Zhang Z.Z.,&Shen D.Z..(2012).Degenerated MgZnO films obtained by excessive zinc.Journal of Crystal Growth,347(1),95-98.
MLA Liu J.S.,et al."Degenerated MgZnO films obtained by excessive zinc".Journal of Crystal Growth 347.1(2012):95-98.
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