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Enhancing the Efficiency and Stability of NiOx-Based Silicon Photoanode via Interfacial Engineering
Zhiqin Ying1,3; Xi Yang4; Rui Tong1; Qing Zhu1; Tian Chen3; Zhubing He3; Hui Pan1,2
2019-08-21
Source PublicationACS Applied Energy Materials
ISSN2574-0962
Volume2Issue:9Pages:6883-6890
Abstract

The photoelectrochemical performance of Si photoanode with a metal–insulator–semiconductor (MIS) structure is limited by weak Schottky barrier and poor charge transfer. In this work, a MIS structure, n-Si|dispersed NiSix/NiOx patches|Au nanoparticles, is designed for efficient water oxidization with high stability. The photoanode exhibits a high activity with a low onset potential of ∼0.88 V and a high photocurrent density of ∼34 mA/cm2 at 1.23 V versus reversible hydrogen electrode (RHE), and retains excellent stability in 1.0 M NaOH for ∼10 h. We find that the improved photovoltage is contributed by the strengthened pinch-off effect of inhomogeneous Schottky barriers induced by the synergistic effect of decreased Schottky barrier height difference and increased depletion width in n-Si. We show that the enhanced photocurrent attributes to the reduced hole transport resistance by introducing high-conductive NiSix and Au-NP bridge layers. Our findings demonstrate a promising strategy for the development of highly efficient and stable Si-based photoelectrodes for water oxidization.

KeywordAu Nanoparticles Niox Photoelectrochemical Water-splitting Pinch-off Effect Silicon Photoanode
DOI10.1021/acsaem.9b01384
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaChemistry ; Energy & Fuels ; Materials Science
WOS SubjectChemistry, Physical ; Energy & Fuels ; Materials Science, Multidisciplinary
WOS IDWOS:000487770000086
Scopus ID2-s2.0-85072645358
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Cited Times [WOS]:2   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorZhubing He
Affiliation1.Joint Key Laboratory of the Ministry of Education,Institute of Applied Physics and Materials Engineering,University of Macau,999078,Macao
2.Department of Physics and Chemistry,Faculty of Science and Technology,University of Macau,999078,Macao
3.Department of Materials Science and Engineering,Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG),Southern University of Science and Technology,Shenzhen, Guangdong,No. 1088, Xueyuan Road,518055,China
4.Ningbo Institute of Material Technology and Engineering,Chinese Academy of Sciences,Ningbo, Zhejiang,315201,China
First Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Zhiqin Ying,Xi Yang,Rui Tong,et al. Enhancing the Efficiency and Stability of NiOx-Based Silicon Photoanode via Interfacial Engineering[J]. ACS Applied Energy Materials,2019,2(9):6883-6890.
APA Zhiqin Ying,Xi Yang,Rui Tong,Qing Zhu,Tian Chen,Zhubing He,&Hui Pan.(2019).Enhancing the Efficiency and Stability of NiOx-Based Silicon Photoanode via Interfacial Engineering.ACS Applied Energy Materials,2(9),6883-6890.
MLA Zhiqin Ying,et al."Enhancing the Efficiency and Stability of NiOx-Based Silicon Photoanode via Interfacial Engineering".ACS Applied Energy Materials 2.9(2019):6883-6890.
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