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Highly in-plane anisotropic 2D semiconductors β-AuSe with multiple superior properties: A first-principles investigation
Peng-Lai Gong1; Fang Zhang1,2; Liang Li3; Bei Deng1; Hui Pan2; Liang-Feng Huang4; Xing-Qiang Shi1
2019-07-09
Source PublicationJournal of Physics Condensed Matter
ISSN0953-8984
Volume31Issue:39
Abstract

Discovering highly in-plane anisotropic two-dimensional (2D) semiconductors with multiple superior properties (good stability, widely tunable bandgap and high mobility) are of great interest for fundamental studies and for developments of novel (opto)electronic devices. By means of state-of-the-art first-principles calculations, herein we present a thorough investigation on the stability, electronic properties and promising applications of previously unexplored 2D semiconductors - gold-selenium (β-AuSe) with strong in-plane anisotropy, whose layered bulk counterpart was synthesized fifty years ago. We show that they have stable structures, widely tunable bandgap varying from 1.66 eV in monolayer to 0.70 eV in five-layer, strong light absorption coefficient (∼10 cm) within the whole visible light range, and high/ultrahigh carrier mobility (10-10 cm V s). More importantly, they show highly in-pane anisotropic behaviors in absorption coefficients, photoconductance and carrier mobility. Especially, the anisotropic ratio of carrier mobility is much higher than the literature reported ones. The above findings show that the in-plane anisotropic 2D β-AuSe are promising candidates for developing polarization-sensitive photodetectors, synaptic devices and micro digital inverters based on multiple superior properties and highly anisotropic behaviors. Besides, few-layer β-AuSe systems can serve as channel materials in field-effect transistors with high mobility or be applied in solar cells with strong light absorption. Our findings demonstrate that few-layer 2D β-AuSe have great potential for multifunctional applications and thus stimulate immediately experimental interests.

Keyword2d Crystals Ause Density Funcational Theory Electronic Properties Highly In-plane Anisotropy Multiple Superior Properties
DOI10.1088/1361-648X/ab2a6a
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaPhysics
WOS SubjectPhysics, Condensed Matter
WOS IDWOS:000474760800001
Scopus ID2-s2.0-85071069574
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Cited Times [WOS]:5   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorHui Pan
Affiliation1.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
2.Joint Key Laboratory of the Ministry of Education,Institute of Applied Physics and Materials Engineering,University of Macau,Macao
3.Institute of Physical Science and Information Technology,Anhui University,Hefei,230601,China
4.Key Laboratory of Marine Materials and Related Technologies,Key Laboratory of Marine Materials and Protective Technologies of Zhejiang Province,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo,315201,China
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Peng-Lai Gong,Fang Zhang,Liang Li,et al. Highly in-plane anisotropic 2D semiconductors β-AuSe with multiple superior properties: A first-principles investigation[J]. Journal of Physics Condensed Matter,2019,31(39).
APA Peng-Lai Gong,Fang Zhang,Liang Li,Bei Deng,Hui Pan,Liang-Feng Huang,&Xing-Qiang Shi.(2019).Highly in-plane anisotropic 2D semiconductors β-AuSe with multiple superior properties: A first-principles investigation.Journal of Physics Condensed Matter,31(39).
MLA Peng-Lai Gong,et al."Highly in-plane anisotropic 2D semiconductors β-AuSe with multiple superior properties: A first-principles investigation".Journal of Physics Condensed Matter 31.39(2019).
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