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Substantially improved energy storage capability of ferroelectric thin films for application in high-temperature capacitors
Pan, Zhongbin1,2; Ding, Jie2; Hou, Xu5; Shi, Songhan2; Yao, Lingmin4; Liu, Jinjun2; Li, Peng3; Chen, Jianwen6; Zhai, Jiwei7; Pan, Hui1
2021-04-14
Source PublicationJournal of Materials Chemistry A
ISSN2050-7488
Volume9Issue:14Pages:9281-9290
Abstract

Ferroelectric thin films capacitors have been potentially applied in advanced electronics and electric power systems because of their high power densities and fast charge-discharge responses. However, continuous operation of the ferroelectric thin film capacitors under elevated temperatures and high electric fields still remains a huge challenge. Herein, we report eco-friendly BiFeO-modified BiNdTiZrO(BNTZ) free-lead ferroelectric thin films for high-temperature capacitor applications that simultaneously possess high-energy storage density (W), efficiency (η), and temperature-dependent stability. The BNTZ-0.09BFO thin film shows a first-class-levelW(∼124 J cm) along with highη(∼81.9%), which surpasses almost all the Pb-contained and Pb-free perovskite ferroelectrics. Of particular importance is that excellent fatigue endurance for long-term stability (10cycles) and thermal stability (−100 °C to 200 °C) could be achieved. This work represents a new design paradigm to exploit advanced dielectric capacitor materials for high-temperature electronics and energy storage devices.

DOI10.1039/d0ta08335f
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaChemistry ; Energy & Fuels ; Materials Science
WOS SubjectChemistry, Physical ; Energy & Fuels ; Materials Science, Multidisciplinary
WOS IDWOS:000639966100032
Scopus ID2-s2.0-85104008233
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Cited Times [WOS]:15   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorPan, Zhongbin; Zhai, Jiwei; Pan, Hui
Affiliation1.Institute of Applied Physics and Materials Engineering, University of Macau, Macao
2.School of Materials Science and Chemical Engineering, Ningbo University, Ningbo, 315211, China
3.School of Materials Science and Engineering, Liaocheng University, Liaocheng, 252059, China
4.School of Physics and Electronic Engineering, Guangzhou University, Guangzhou, 510006, China
5.Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou, Zheda Road 38, 310027, China
6.School of Electronic and Information Engineering, Foshan University, Foshan, 528000, China
7.School of Materials Science & Engineering, Tongji University, Shanghai, 201804, China
First Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Pan, Zhongbin,Ding, Jie,Hou, Xu,et al. Substantially improved energy storage capability of ferroelectric thin films for application in high-temperature capacitors[J]. Journal of Materials Chemistry A,2021,9(14):9281-9290.
APA Pan, Zhongbin,Ding, Jie,Hou, Xu,Shi, Songhan,Yao, Lingmin,Liu, Jinjun,Li, Peng,Chen, Jianwen,Zhai, Jiwei,&Pan, Hui.(2021).Substantially improved energy storage capability of ferroelectric thin films for application in high-temperature capacitors.Journal of Materials Chemistry A,9(14),9281-9290.
MLA Pan, Zhongbin,et al."Substantially improved energy storage capability of ferroelectric thin films for application in high-temperature capacitors".Journal of Materials Chemistry A 9.14(2021):9281-9290.
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