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Antisolvent Engineering to Optimize Grain Crystallinity and Hole-Blocking Capability of Perovskite Films for High-Performance Photovoltaics
Yulan Huang1,2; Tanghao Liu1; Bingzhe Wang1; Jielei Li1; Dongyang Li2; Guoliang Wang2; Qing Lian2; Abbas Amini3; Shi Chen1; Chun Cheng2,4,5; Guichuan Xing1
2021-09-23
Source PublicationAdvanced Materials
ISSN0935-9648
Volume33Issue:38Pages:2102816
Other Abstract

With potential commercial applications, inverted perovskite solar cells (PSCs) have received wide-spread attentions as they are compatible with tandem devices and processed at low-temperature. Nevertheless, their efficiencies remain unsatisfactory due to insufficient film quality on hydrophobic hole transport layer and limited hole-blocking capability of the electron transport layer. Herein, 1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi), an n-type semiconductor, is incorporated into the antisolvent to simultaneously regulate the grain growth and charge transport of perovskite films. TPBi facilitates the crystallization of perovskites along (100) orientation. Besides, TPBi is mainly distributed near the top surface of perovskite film and enhances the hole-blocking capability of the area adjacent to the surface. The superior properties of this film lead to a remarkable improvement in the open-circuit voltage of inverted PSCs. The champion device achieves a high power conversion efficiency of 21.79% while keeping ≈92% of its initial value after 1000 h storage in the ambient atmosphere. This work provides an effective way to evidently promote the performance of inverted PSCs and illustrates its underlaying mechanism.

DOI10.1002/adma.202102816
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000680013700001
PublisherWILEY-V C H VERLAG GMBH,POSTFACH 101161, 69451 WEINHEIM, GERMANY
Scopus ID2-s2.0-85111667045
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Cited Times [WOS]:24   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorTanghao Liu; Chun Cheng; Guichuan Xing
Affiliation1.Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, 999078, Macao
2.Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong Province, 518055, China
3.Center for Infrastructure Engineering, Western Sydney University, Kingswood, 2751, Australia
4.Guangdong Provincial Key Laboratory of Energy Materials for Electric Power, Southern University of Science and Technology, Shenzhen, Guangdong Province, 518055, China
5.Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology, Shenzhen, 518055, China
First Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Yulan Huang,Tanghao Liu,Bingzhe Wang,et al. Antisolvent Engineering to Optimize Grain Crystallinity and Hole-Blocking Capability of Perovskite Films for High-Performance Photovoltaics[J]. Advanced Materials,2021,33(38):2102816.
APA Yulan Huang,Tanghao Liu,Bingzhe Wang,Jielei Li,Dongyang Li,Guoliang Wang,Qing Lian,Abbas Amini,Shi Chen,Chun Cheng,&Guichuan Xing.(2021).Antisolvent Engineering to Optimize Grain Crystallinity and Hole-Blocking Capability of Perovskite Films for High-Performance Photovoltaics.Advanced Materials,33(38),2102816.
MLA Yulan Huang,et al."Antisolvent Engineering to Optimize Grain Crystallinity and Hole-Blocking Capability of Perovskite Films for High-Performance Photovoltaics".Advanced Materials 33.38(2021):2102816.
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