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The catalyst-free growth of layer-structured CuInSe2/β-In2Se3microwires for ultrasensitive self-powered photodetectors based on a lateral p-n junction
He, Jianfeng1,2; Chen, Hongyu1,2; Zhao, Qixiao1,2; Wang, Yifan1,2; Pan, Yuan1,2; Huang, Shan1,2; Ling, Francis Chi Chung3; Wang, Shuangpeng4; Su, Shichen1,2,5
2021-08-14
Source PublicationJournal of Materials Chemistry C
ISSN2050-7534
Volume9Issue:30Pages:9484-9491
Abstract

Herein, layer-structured β-InSemicrowires were obtainedviaa facile chemical vapour deposition (CVD) method without any catalyst. As a novel kind of building block for constructing photodetectors, this one-dimensional (1D) layer-structured β-InSecan overcome issues relating to the persistent photoconductance effects of 1D materials and the insufficient optical absorption of two-dimensional (2D) layered materials. Utilizing the high carrier mobility of layered β-InSe, a lateral p-n junction based on CuInSe/InSemicrowire was subsequently assembledviaa simple solid-state reaction using these same layers. The lateral p-n junction, with a high rejection ratio of 10, exhibits excellent photovoltaic characteristics. In particular, a high on/off ratio of 4 × 10could be achieved under a light intensity of 25.18 mW cm(405 nm) without any power supply. Moreover, the dark current is 1.5 pA, which is smaller than most previous InSe-based photodetectors. The responsivity of the device can reach a highest value of 10.52 mA W. This value is comparable to those of pristine InSedevice at 0.1 V and CuInSedevice at 0.5 V. Also, the response times are one order of magnitude faster than those of pristine InSeand CuInSedevices. This work offers new insight into the rational design of 1D or quasi-1D multilayer semiconductors for use in high-performance, low-cost, and energy-efficient photodetectors.

DOI10.1039/d1tc02354c
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000673329700001
Scopus ID2-s2.0-85112662784
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Cited Times [WOS]:4   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorChen, Hongyu; Su, Shichen
Affiliation1.Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, China
2.Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, China
3.Department of Physics, University of Hong Kong, Hong Kong, Pokfulam Road, 999077, Hong Kong
4.Instituted of Applied Physics and Materials Engineering, University of Macau, 999078, Macao
5.SCNU Qingyuan Institute of Science and Technology Innovation Co. Ltd., Qingyuan, 511517, China
Recommended Citation
GB/T 7714
He, Jianfeng,Chen, Hongyu,Zhao, Qixiao,et al. The catalyst-free growth of layer-structured CuInSe2/β-In2Se3microwires for ultrasensitive self-powered photodetectors based on a lateral p-n junction[J]. Journal of Materials Chemistry C,2021,9(30):9484-9491.
APA He, Jianfeng,Chen, Hongyu,Zhao, Qixiao,Wang, Yifan,Pan, Yuan,Huang, Shan,Ling, Francis Chi Chung,Wang, Shuangpeng,&Su, Shichen.(2021).The catalyst-free growth of layer-structured CuInSe2/β-In2Se3microwires for ultrasensitive self-powered photodetectors based on a lateral p-n junction.Journal of Materials Chemistry C,9(30),9484-9491.
MLA He, Jianfeng,et al."The catalyst-free growth of layer-structured CuInSe2/β-In2Se3microwires for ultrasensitive self-powered photodetectors based on a lateral p-n junction".Journal of Materials Chemistry C 9.30(2021):9484-9491.
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