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Constructing metallic nanoroads on a MoS2 monolayer via hydrogenation
Cai Y.1; Bai Z.2; Pan H.3; Feng Y.P.2; Yakobson B.I.4,5; Zhang Y.-W.1
2014
Source PublicationNanoscale
ISSN20403364
Volume6Issue:3Pages:1691
Abstract

Monolayer transition metal dichalcogenides recently emerged as a new family of two-dimensional materials potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of a finite band gap. Many proposed applications require efficient transport of charge carriers within these semiconducting monolayers. However, constructing a stable conducting nanoroad on these atomically thin semiconductors is still a challenge. Here we demonstrate that hydrogenation on the surface of a MoS2 monolayer induces a semiconductor-metal transition, and strip-patterned hydrogenation is able to generate a conducting nanoroad. The band-gap closing arises from the formation of in-gap hybridized states mainly consisting of Mo 4d orbitals, as well as the electron donation from hydrogen to the lattice host. Ballistic conductance calculations reveal that such a nanoroad on the MoS2 surface exhibits an integer conductance, indicating small carrier scattering, and thus is ideal for serving as a conducting channel or an interconnect without compromising the mechanical and structural integrity of the monolayer. © 2013 The Royal Society of Chemistry.

DOI10.1039/c3nr05218d
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaChemistry ; Physics ; Materials Science ; Science & Technology - Other Topics
WOS SubjectChemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000330041400061
The Source to ArticleScopus
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Cited Times [WOS]:37   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Affiliation1.Inst High Performance Comp, Singapore 138632, Singapore
2.Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
3.Univ Macau, Fac Sci & Technol, Macau, Peoples R China
4.Rice Univ, Dept Mat Sci & Nanoengn, Dept Chem, Houston, TX 77005 USA
5.Rice Univ, Smalley Inst Nanoscale Sci & Technol, Houston, TX 77005 USA
Recommended Citation
GB/T 7714
Cai Y.,Bai Z.,Pan H.,et al. Constructing metallic nanoroads on a MoS2 monolayer via hydrogenation[J]. Nanoscale,2014,6(3):1691.
APA Cai Y.,Bai Z.,Pan H.,Feng Y.P.,Yakobson B.I.,&Zhang Y.-W..(2014).Constructing metallic nanoroads on a MoS2 monolayer via hydrogenation.Nanoscale,6(3),1691.
MLA Cai Y.,et al."Constructing metallic nanoroads on a MoS2 monolayer via hydrogenation".Nanoscale 6.3(2014):1691.
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