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Efficiency Improvement of Quantum Dot Light-Emitting Diodes via Thermal Damage Suppression with HATCN
Liu, Ren Jun1; Dong, Jia Yi1; Wang, Meng Wei1; Yuan, Qi Lin1,3; Ji, Wen Yu3; Xu, Jin Cheng1; Liu, Wei Wei1,2; Su, Shi Chen4,5; Ng, Kar Wei1; Tang, Zi Kang1; Wang, Shuang Peng1
2021-10-20
Source PublicationACS Applied Materials and Interfaces
ISSN1944-8244
Volume13Issue:41Pages:49058-49065
Abstract

With many advantages including superior color saturation and efficiency, quantum dot light-emitting diodes (QLEDs) are considered a promising candidate for the next-generation displays. Emission uniformity over the entire device area is a critical factor to the overall performance and reliability of QLEDs. In this work, we performed a thorough study on the origin of dark spots commonly observed in operating QLEDs and developed a strategy to eliminate these defects. Using advanced cross section fabrication and imaging techniques, we discovered the occurrence of voids in the organic hole transport layer and directly correlated them to the observed emission nonuniformity. Further investigations revealed that these voids are thermal damages induced during the subsequent thermal deposition of other functional layers and can act as leakage paths in the device. By inserting a thermo-tolerant 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HATCN) interlayer with an optimized thickness, the thermally induced dark spots can be completely suppressed, leading to a current efficiency increase by 18%. We further demonstrated that such a thermal passivation strategy can work universally for various types of organic layers with low thermal stability. Our findings here provide important guidance in enhancing the performances and reliability of QLEDs and also other sandwich-structured devices via the passivation of heat-sensitive layers.

KeywordCurrent Efficiency Interface Interlayer Qled Thermal Damage
DOI10.1021/acsami.1c16034
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaScience & Technology - Other Topics ; Materials Science
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000710924900070
Scopus ID2-s2.0-85117778954
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Cited Times [WOS]:0   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Corresponding AuthorNg, Kar Wei; Tang, Zi Kang; Wang, Shuang Peng
Affiliation1.Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, 999078, Macao
2.Department of Physics and Electronic Engineering, Yancheng Teachers University, Yancheng, 224002, China
3.Key Lab of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, 2699 Qianjin Street, 130012, China
4.Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, China
5.SCNU Qingyuan Institute of Science and Technology Innovation Co., Ltd., Qingyuan, 511517, China
First Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Liu, Ren Jun,Dong, Jia Yi,Wang, Meng Wei,et al. Efficiency Improvement of Quantum Dot Light-Emitting Diodes via Thermal Damage Suppression with HATCN[J]. ACS Applied Materials and Interfaces,2021,13(41):49058-49065.
APA Liu, Ren Jun,Dong, Jia Yi,Wang, Meng Wei,Yuan, Qi Lin,Ji, Wen Yu,Xu, Jin Cheng,Liu, Wei Wei,Su, Shi Chen,Ng, Kar Wei,Tang, Zi Kang,&Wang, Shuang Peng.(2021).Efficiency Improvement of Quantum Dot Light-Emitting Diodes via Thermal Damage Suppression with HATCN.ACS Applied Materials and Interfaces,13(41),49058-49065.
MLA Liu, Ren Jun,et al."Efficiency Improvement of Quantum Dot Light-Emitting Diodes via Thermal Damage Suppression with HATCN".ACS Applied Materials and Interfaces 13.41(2021):49058-49065.
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