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Synergistic Effect of Halogen Ions and Shelling Temperature on Anion Exchange Induced Interfacial Restructuring for Highly Efficient Blue Emissive InP/ZnS Quantum Dots
Cui, Zhongjie1; Mei, Shiliang1; Wen, Zhuoqi2; Yang, Dan1; Qin, Shuaitao1; Xiong, Zhiyong2; Yang, Bobo3; He, Haiyang1; Bao, Rui2; Qiu, Yi1; Chen, Yuanyuan1; Zhang, Wanlu1; Xie, Fengxian1,4; Xing, Guichuan5; Guo, Ruiqian1,2,4,6
2022-04
Source PublicationSmall
ISSN1613-6810
Volume18Issue:15
Abstract

InP quantum dots (QDs) have attracted much attention owing to their nontoxic properties and shown great potential in optoelectronic applications. Due to the surface defects and lattice mismatch, the interfacial structure of InP/ZnS QDs plays a significant role in their performance. Herein, the formation of In–S and S–In–P interlayers through anion exchange at the shell-growth stage is revealed. More importantly, it is proposed that the composition of interface is dependent on the synergistic effect of halogen ions and shelling temperature. High shelling temperature contributes to the optical performance improvement resulting from the formation of interlayers, besides the thicker ZnS shell. Moreover, the effect relates to the halogen ions where I presents more obvious enhancement than Br and Cl, owing to their different ability to coordinate with In dangling bonds, which are inclined to form In–S and S–In–P bonds. Further, the anion exchange under I-rich environment causes a blue-shift of emission wavelength with shelling temperature increasing, unobserved in a Cl- or Br-rich environment. It contributes to the preparation of highly efficient blue emissive InP/ZnS QDs with emission wavelength of 473 nm, photoluminescence quantum yield of ≈50% and full width at half maximum of 47 nm.

KeywordAnion Exchange Blue Emissive Halogen Ions Inp/zns Quantum Dots Interfaces
DOI10.1002/smll.202108120
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000765152800001
Scopus ID2-s2.0-85125670029
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Cited Times [WOS]:7   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorXie, Fengxian; Xing, Guichuan; Guo, Ruiqian
Affiliation1.Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
2.Institute of Future Lighting, Academy for Engineering and Technology, Fudan University, Shanghai, 200433, China
3.School of Science, Shanghai Institute of Technology, Shanghai, 201418, China
4.Zhongshan-Fudan Joint Innovation Center, Zhongshan, 528437, China
5.Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Avenida da Universidade, 999078, Macao
6.Yiwu Research Institute of Fudan University, Yiwu City, Chengbei Road, 322000, China
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Cui, Zhongjie,Mei, Shiliang,Wen, Zhuoqi,et al. Synergistic Effect of Halogen Ions and Shelling Temperature on Anion Exchange Induced Interfacial Restructuring for Highly Efficient Blue Emissive InP/ZnS Quantum Dots[J]. Small,2022,18(15).
APA Cui, Zhongjie,Mei, Shiliang,Wen, Zhuoqi,Yang, Dan,Qin, Shuaitao,Xiong, Zhiyong,Yang, Bobo,He, Haiyang,Bao, Rui,Qiu, Yi,Chen, Yuanyuan,Zhang, Wanlu,Xie, Fengxian,Xing, Guichuan,&Guo, Ruiqian.(2022).Synergistic Effect of Halogen Ions and Shelling Temperature on Anion Exchange Induced Interfacial Restructuring for Highly Efficient Blue Emissive InP/ZnS Quantum Dots.Small,18(15).
MLA Cui, Zhongjie,et al."Synergistic Effect of Halogen Ions and Shelling Temperature on Anion Exchange Induced Interfacial Restructuring for Highly Efficient Blue Emissive InP/ZnS Quantum Dots".Small 18.15(2022).
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