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A BJT-Based CMOS Temperature Sensor Achieving an Inaccuracy of pm 0.45C(3) from °50°C to 180°C and a Resolution-FoM of 7.2pJ.K2at 150°C Conference paper
Digest of Technical Papers - IEEE International Solid-State Circuits Conference, San Francisco, CA, USA, 2022-02
Authors:  Wang, Bo;  Law, Man Kay;  Bermak, Amine
Favorite |  | TC[WOS]:0 TC[Scopus]:0 | Submit date:2022/05/17
A Time-Domain CMOS Temperature Sensor Using Gated Ring Oscillator with Linearity Optimization Conference paper
ISSCS 2021 - International Symposium on Signals, Circuits and Systems, Lasi, 15-16 July 2021
Authors:  Liu, Yangyang;  Lei, Yu;  Law, Man Kay;  Veigas, Bruno;  Mak, Pui In;  Martins, Rui P.
Favorite |  | TC[WOS]:0 TC[Scopus]:0 | Submit date:2021/09/20
Bjt  Cmos Temperature Sensor  Gated Ring Oscillator  Linearity Optimization  Time Domain  
A 0.5-V supply, 36nW bandgap reference with 42ppm/°C average temperature coefficient within -40°C to 120°C Journal article
IEEE Transactions on Circuits and Systems I - Regular Papers, 2020,Page: 3656-3669
Authors:  U, C.-W.;  Zeng, W.-L.;  Law, M. K.;  Lam, C. S.;  Martins, R. P.
Favorite |  | TC[WOS]:0 TC[Scopus]:0 | Submit date:2022/01/25
Bandgap Voltage Reference  Low Voltage  Low Power  Switched Capacitor Circuits  Temperature Coefficient.  
A 0.5-V Supply, 36 nW Bandgap Reference with 42 ppm/°C Average Temperature Coefficient Within-40 °c to 120 °c Journal article
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020,Volume: 67,Issue: 11,Page: 3656-3669
Authors:  U,Chi Wa;  Zeng,Wen Liang;  Law,Man Kay;  Lam,Chi Seng;  Martins,Rui Paulo
Favorite |  | TC[WOS]:9 TC[Scopus]:12 | Submit date:2021/03/04
Bandgap Voltage Reference  Low Power  Low Voltage  Switched Capacitor Circuits  Temperature Coefficient  
Movie Industry Demand and Theater Availability Journal article
Review of Industrial Organization, 2020,Volume: 56,Issue: 3,Page: 489-513
Authors:  Leung, Tin Cheuk;  Qi, Shi;  Yuan, Jia
Adobe PDF | Favorite |  | TC[WOS]:3 TC[Scopus]:3 | Submit date:2021/12/06
Movie Demand  Theater Availability  Demand Estimation  
A curvature compensated bjt-based time-domain temperature sensor with an inaccuracy of ±0.7°C from -40°C to 125°C Conference paper
2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Xian, PEOPLES R CHINA, JUN 12-14, 2019
Authors:  Xu,Yukun;  Law,Man Kay;  Mak,Pui In;  Martins,Rui P.
Favorite |  | TC[WOS]:0 TC[Scopus]:1 | Submit date:2021/03/09
Cmos Temperature Sensor  Curvature Compensation  Low-power  Time Domain  
Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy Journal article
ELECTRONICS LETTERS, 2018,Volume: 54,Issue: 22,Page: 1270-1271
Authors:  Sun, Dapeng;  Zhang, Tan-Tan;  Law, Man-Kay;  Mak, Pui-In;  Martins, Rui Paulo
Favorite |  | TC[WOS]:0 TC[Scopus]:0 | Submit date:2019/01/17
Resistors  Calibration  Cmos Integrated Circuits  Bipolar Transistors  Temperature Sensors  First-batch-only Calibration Parameters  Batch-to-batch Inaccuracy  Piecewise Bjt Process  Compensation Property  Base Recombination Current  Base-emitter Voltage  Cmos Temperature Sensor  Process Compensated Bjt  Intra-die Variation  Spread Compensation Property  On-chip Resistors  Inter-die Variation  Current 3  0 Mua  Voltage 1  2 v  Temperature-40 Degc To 125 Degc  Size 0  036 Mm  
Ultra-low Power/Energy Efficient High Accuracy CMOS Temperature Sensors Book chapter
出自: Selected Topics in Power, RF, and Mixed-Signal ICs:River Publishers, 2017, 页码: 229-266
Authors:  Law, M. K.
Favorite |  | TC[WOS]:0 TC[Scopus]:0 | Submit date:2022/08/09
Ultra-Low Power  Energy Efficiency  High Accuracy  CMOS Temperature Sensor  Calibration  BJT  MOSFET  
Piecewise BJT process spread compensation exploiting base recombination current Conference paper
2017 IEEE International Symposium on Circuits and Systems (ISCAS), Baltimore, MD, USA, 28-31 May 2017
Authors:  Sun, Dapeng;  Law, Man-Kay;  Wang, Bo;  Mak, Pui-In;  Martins, Rui P.
Favorite |  | TC[WOS]:0 TC[Scopus]:1 | Submit date:2019/02/11
Bipolar Junction Transistor (Bjt)  Piecewise Process Spread Compensation  Base Recombination Current  
BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS Journal article
IEEE Electron Device Letters, 2015,Volume: 36,Issue: 11,Page: 1111-1113
Authors:  Wang B.;  Law M.K.;  Bermak A.;  Tang F.
Favorite |  | TC[WOS]:3 TC[Scopus]:4 | Submit date:2019/02/14
Bipolar Junction Transistor (Bjt) Process Spread  Spread Compensation  Trimless Cmos Voltage Reference