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A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT Process Journal article
Applied Sciences (Switzerland), 2022,Volume: 12,Issue: 21
Authors:  Hu, Aizhen;  Leng, Yongqing;  Qiu, Xin;  Luan, Tongyao;  Peng, Yatao
Favorite |  | TC[WOS]:0 TC[Scopus]:0 | Submit date:2022/12/01
7–13 Ghz  High Efficiency  Monolithic Microwave Integrated Circuit  Power Amplifier  Two-stage  
Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression Network Journal article
Applied Sciences (Switzerland), 2022,Volume: 12,Issue: 21
Authors:  Luan, Tongyao;  Leng, Yongqing;  Qiu, Xin;  Cui, Xingli;  Hu, Aizhen;  Xu, Bo;  Peng, Yatao
Favorite |  | TC[WOS]:0 TC[Scopus]:0 | Submit date:2022/12/01
Gan-on-sic Hemt  Harmonic Suppression  Non-uniform Distributed  Power Amplifier  Ultra-wideband  
A 27-dBm, 0.92-GHz CMOS Power Amplifier with Mode Switching and a High-Q Compact Inductor (HQCI) Achieving a 30% Back-Off PAE Journal article
IEEE Transactions on Circuits and Systems II: Express Briefs, 2022
Authors:  Rawat, Arvind Singh;  Rajendran, Jagadheswaran;  Mariappan, Selvakumar;  Kumar, Narendra;  Mak, Pui In;  Martins, Rui P.
Favorite |  | TC[WOS]:0 TC[Scopus]:0 | Submit date:2022/09/29
Adaptive Size  Back-off Efficiency  Cmos  Inductors  Intermodulation  Linearity  Linearity  Matching Networks  Metals  Power Amplifier (Pa)  Power Amplifiers  Q-factor  Q-factor  Spiral Inductor  Sub-ghz  Switches  Switching  Transistors  
A 6.5-mm2 10.5-to-15.5-GHz Differential GaN PA with Coupled-Line-Based Matching Networks Achieving 10-W Peak Psat and 42% PAE Journal article
IEEE Transactions on Circuits and Systems II: Express Briefs, 2022,Volume: 69,Issue: 11,Page: 4268-4272
Authors:  Zhang, Jincheng;  Nie, Lihe;  Chen, Yong;  Ren, Junyan;  Ma, Shunli
Favorite |  | TC[WOS]:0 TC[Scopus]:0 | Submit date:2022/08/05
Broadband Matching  Coupled-line  Couplings  Differential  Gallium Nitride  Gan  Impedance  Ku-band  Power Amplifier (Pa)  Power Amplifiers  Power Combiner  Q-factor  Resonators  Transistors  
A 1.7-to-2.7GHz 35-38% PAE Multiband CMOS Power Amplifier Employing a Digitally-Assisted Analog Pre-distorter (DAAPD) Reconfigurable Linearization Technique Journal article
IEEE Transactions on Circuits and Systems II: Express Briefs, 2021,Volume: 68,Issue: 11,Page: 3381-3385
Authors:  Mariappan, Selvakumar;  Rajendran, Jagadheswaran;  Chen, Yong;  Mak, Pui In;  Martins, Rui P.
Favorite |  | TC[WOS]:2 TC[Scopus]:2 | Submit date:2021/09/20
Adjacent Channel Leakage Ratio (Aclr) And Error Vector Magnitude (Evm)  Back-off Output Power (Pbo)  Cmos  Digitally-assisted Analog Predistorter (Daapd)  Long Term Evolution  Long-term Evolution (Lte).  Power Amplifier (Pa)  Power Amplifiers  Power Generation  Power-added Efficiency (Pae)  Transconductance  Transistors  Tuning  Voltage Control  
An 800 MHz-to-3.3 GHz 20-MHz Channel Bandwidth WPD CMOS Power Amplifier for Multiband Uplink Radio Transceivers Journal article
IEEE Transactions on Circuits and Systems II: Express Briefs, 2021,Volume: 68,Issue: 4,Page: 1178-1182
Authors:  Mariappan, Selvakumar;  Rajendran, Jagadheswaran;  Ramiah, Harikrishnan;  Mak, Pui In;  Yin, Jun;  Martins, Rui P.
Favorite |  | TC[WOS]:1 TC[Scopus]:1 | Submit date:2021/09/20
Cmos  Evm  Linearization  Lte  Power Amplifier (Pa)  Pre-distorter  
A High-Voltage-Enabled Class-D Polar PA Using Interactive AM-AM Modulation, Dynamic Matching, and Power-Gating for Average PAE Enhancement Journal article
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2017,Volume: 64,Issue: 11,Page: 2844-2857
Authors:  Yu, Wei-Han;  Peng, Xingqiang;  Mak, Pui-In;  Martins, Rui P.
Favorite |  | TC[WOS]:4 TC[Scopus]:4 | Submit date:2018/10/30
Aa Battery  Antenna Impedance Mismatch  Class-d  Cmos  Digital Am Modulation  Dynamic Matching Network (Dmn)  Error-vector Magnitude (Evm)  Inverter Chain  Leakage Current  Matching Network (Mn)  Polar  Power Amplifier (Pa)  Power-added Efficiency (Pae)  Power Gating  
A 2-μm InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power Journal article
IEEE Transactions on Microwave Theory and Techniques, 2016,Volume: 64,Issue: 1,Page: 200-209
Authors:  U. R. Jagadheswaran;  Harikrishnan Ramiah;  Pui-In Mak;  Rui P. Martins
Favorite |  | TC[WOS]:17 TC[Scopus]:20 | Submit date:2019/02/11
Adjacent Channel Leakage Ratio (Aclr)  Error Vector Magnitude (Evm)  Gallium-arsenide (Gaas)  Long-term Evolution (Lte)  Power Amplifier (Pa)  Power-added Efficiency (Pae)  Quadrature Amplitude Modulation (Qam)  
A 2-μm InGaP/GaAs Class-J Power Amplifier for Multi-band LTE Achieving 35.8-dB Gain, 40.5%-to-55.8% PAE and 28-dBm Linear Output Power Journal article
IEEE Transactions on Microwave Theory and Techniques, 2016,Page: 200-209
Authors:  Ramiah, H.;  Eswaran, U. R. J.;  Mak, P. I.;  Martins, R. P.
Favorite |  | TC[WOS]:17 TC[Scopus]:0 | Submit date:2022/01/24
Class-j Power Amplifier  Multi-band Lte  
A 2-μ InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power Journal article
IEEE Transactions on Microwave Theory and Techniques, 2016,Volume: 64,Issue: 1,Page: 200-209
Authors:  Jagadheswaran,U. R.;  Ramiah,Harikrishnan;  Mak,Pui In;  Martins,Rui P.
Favorite |  | TC[WOS]:17 TC[Scopus]:20 | Submit date:2021/03/09
Adjacent Channel Leakage Ratio (Aclr)  Error Vector Magnitude (Evm)  Gallium-arsenide (Gaas)  Long-term Evolution (Lte)  Power Amplifier (Pa)  Power-added Efficiency (Pae)  Quadrature Amplitude Modulation (Qam)