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| Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer Journal article
Applied Physics Letters, 2013,Volume: 102,Issue: 23
Authors: Xie X.H.; Zhang Z.Z.; Li B.H.; Wang S.P. ; Jiang M.M.; Shan C.X.; Zhao D.X.; Chen H.Y.; Shen D.Z.
  Favorite | | TC[WOS]:22 TC[Scopus]:22 | Submit date：2019/04/08 |
| Degenerated MgZnO films obtained by excessive zinc Journal article
Journal of Crystal Growth, 2012,Volume: 347,Issue: 1,Page: 95-98
Authors: Liu J.S.; Shan C.X.; Wang S.P.; Li B.H.; Zhang Z.Z.; Shen D.Z.
Favorite | | TC[WOS]:11 TC[Scopus]:11 | Submit date：2019/04/08
A1. Characterization A3. Molecular Beam Epitaxy B2. Semiconducting Ii-vi Materials |
| On the origin of intrinsic donors in ZnO Journal article
Applied Surface Science, 2010,Volume: 256,Issue: 11,Page: 3390-3393
Authors: Sun F.; Shan C.X.; Wang S.P.; Li B.H.; Zhang J.Y.; Zhang Z.Z.; Zhao D.X.; Yao B.; Shen D.Z.; Fan X.W.
Favorite | | TC[WOS]:22 TC[Scopus]:21 | Submit date：2019/04/08
Carrier Concentration Hall Measurement Intrinsic Donors Zinc Oxide |
| Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire Conference paper
Journal of the Korean Physical Society
Authors: Wei Z.P.; Lu Y.M.; Shen D.Z.; Zhang Z.Z.; Yao B.; Li B.H.; Zhang J.Y.; Zhao D.X.; Fan X.W.; Tang Z.K.
Favorite | | TC[WOS]:0 TC[Scopus]:0 | Submit date：2019/04/08
Electroluminescence LED P-MBE P-type ZnO |
| Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors Conference paper
Journal of the Korean Physical Society
Authors: Wei Z.P.; Yao B.; Li Y.F.; Shen D.Z.; Lu Y.M.; Zhang Z.Z.; Li B.H.; Zheng C.J.; Wang X.H.; Zhang J.Y.; Zhao D.X.; Fan X.W.; Tang Z.K.
Favorite | | TC[WOS]:0 TC[Scopus]:0 | Submit date：2019/04/08
N doping P-MBE ZnMgO/ZnO p-n junction |
| Realization of p -type conduction in undoped MgxZn 1-xO thin films by controlling Mg content Journal article
Applied Physics Letters, 2007,Volume: 91,Issue: 23
Authors: Li Y.F.; Yao B.; Lu Y.M.; Wei Z.P.; Gai Y.Q.; Zheng C.J.; Zhang Z.Z.; Li B.H.; Shen D.Z.; Fan X.W.; Tang Z.K.
Favorite | | TC[WOS]:59 TC[Scopus]:69 | Submit date：2019/04/08 |
| Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films Journal article
Journal of Materials Research, 2007,Volume: 22,Issue: 10,Page: 2791-2795
Authors: Wei Z.P.; Yao B.; Wang X.H.; Zhang Z.Z.; Lu Y.M.; Shen D.Z.; Li B.H.; Zhang J.Y.; Zhao D.X.; Fan X.W.; Tang Z.K.
Favorite | | TC[WOS]:6 TC[Scopus]:6 | Submit date：2019/04/08 |
| Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 373-377
Authors: Lu Y.M.; Wang X.; Zhang Z.Z.; Shen D.Z.; Su S.C.; Yao B.; Li B.H.; Zhang J.Y.; Zhao D.X.; Fan X.W.; Tang Z.K.
Favorite | | TC[WOS]:20 TC[Scopus]:22 | Submit date：2019/04/08
A1. Atomic force microscopy A1. Photoluminescence A1. X-ray diffraction A3. Molecular beam epitaxy B1. Zinc oxide |
| p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 362-365
Authors: Zhang Z.Z.; Wei Z.P.; Lu Y.M.; Shen D.Z.; Yao B.; Li B.H.; Zhao D.X.; Zhang J.Y.; Fan X.W.; Tang Z.K.
Favorite | | TC[WOS]:28 TC[Scopus]:30 | Submit date：2019/04/08
A3. Molecular beam epitaxy B2. Semiconducting II-VI materials B3. Light-emitting diodes |
| Room temperature p-n ZnO blue-violet light-emitting diodes Journal article
Applied Physics Letters, 2007,Volume: 90,Issue: 4
Authors: Wei Z.P.; Lu Y.M.; Shen D.Z.; Zhang Z.Z.; Yao B.; Li B.H.; Zhang J.Y.; Zhao D.X.; Fan X.W.; Tang Z.K.
Favorite | | TC[WOS]:176 TC[Scopus]:193 | Submit date：2019/04/08 |
